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GaN Power Device Market Insights | Key players: Cree, Qorvo, MACOM, Microsemi Corporation

by nareshkumar1 month ago
tags: GaN Power Device Market

The GaN power device market is expected to reach USD 1,890.2 million by 2023 from USD 408.3 million in 2017, at a CAGR of 29.1% between 2017 and 2023. The market has been segmented on the basis of device type, voltage range, application, vertical, and geography.

Product launch and development has been the key strategies adopted by the players to strengthen their business and gain a competitive advantage in the GaN power device market. This strategy accounted for a share of 74% of the overall growth strategies adopted by the key players between January 2014 and October 2017. The ongoing research and developments in the GaN power device space have encouraged companies to adopt this strategy. In addition to product launches and developments, the companies also focus on agreements, acquisitions, and collaborations to expand their product portfolio, sales, and distribution network. This strategy significantly increased their market shares and strengthened their position in the overall GaN power device market. These strategies collectively accounted for 26% of the overall growth strategies adopted by the key market players between January 2014 and October 2017.

Download PDF Brochure @ https://www.marketsandmarkets.com/pdfdownloadNew.asp?id=93870461

Efficient Power Conversion Corporation (EPC) (US) manufactures enhancement-mode GaN power transistors. EPC has a broad portfolio of GaN products that features ultra-high frequency field-effect transistor (FETs), enhancement mode monolithic half-bridges, and demo boards. All its GaN-based products find applications in datacom/telecom DC–DC, envelope tracking, wireless power, space applications, light detection and ranging (LiDAR), class D audio amplifiers, power inverter, medical technology, wireless charging, multi-level AC–DC power supplies, synchronous rectification, robotics, and solar micro inverters. The company has strong research and development activities and has developed a proprietary enhancement-mode GaN technology, which would replace power MOSFETs and LDMOS solutions.

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